Modelling of the composition segregation effect during epitaxial growth of InGaAs quantum well heterostructures
Identifieur interne : 000107 ( Russie/Analysis ); précédent : 000106; suivant : 000108Modelling of the composition segregation effect during epitaxial growth of InGaAs quantum well heterostructures
Auteurs : RBID : Pascal:11-0015865Descripteurs français
- Pascal (Inist)
- Modélisation, Photoluminescence, Adatome, Epitaxie, Méthode Monte Carlo, Croissance pseudomorphique, Mécanisme croissance, Energie activation, Diffusion superficielle, Gallium Indium Arséniure Mixte, Distribution concentration, Déformation élastique, Puits quantique, Hétérostructure, Sulfure de calcium, Couche ultramince, InGaAs, GaAs, Croissance couche par couche.
English descriptors
- KwdEn :
- Activation energy, Adatoms, Calcium sulfide, Concentration distribution, Elastic deformation, Epitaxy, Gallium Indium Arsenides Mixed, Growth mechanism, Heterostructures, Layer by layer growth, Modelling, Monte Carlo methods, Photoluminescence, Pseudomorphic growth, Quantum wells, Surface diffusion, Ultrathin films.
Abstract
Using a Monte Carlo (MC) technique, we performed numerical modelling of the kinetic segregation effect during epitaxial growth of a heterostructure containing an IncGa1-cAs quantum well (QW) surrounded by two GaAs barriers. The growth occurs in the direction coinciding with or slightly tilted from [001]. The model of growth kinetics takes into account the effect of pseudomorphic deformation of the underlying atomic layers onto the activation energy of adatom diffusion in the growing monolayer. It influences the surface segregation of In atoms and affects the QW shape. Within the effective mass approximation, the dependence of the lowest electron-hole transition energy on the degree of In/Ga segregation (in turn, depending upon the growth conditions and substrate tilting angle) was calculated. The calculations were performed using the composition profiles obtained from the MC modelling and taking into account the corresponding distribution of the elastic strain. The results show that the segregation effect leads to a considerable blue shift and broadening of the QW photoluminescence (PL) peak which increase for higher growth temperatures and lower values of the total cation flux from the gas phase onto the growing surface. Growth on vicinal substrates leads to a reduction of the PL peak broadening.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Modelling of the composition segregation effect during epitaxial growth of InGaAs quantum well heterostructures</title><author><name sortKey="Khazanova, S V" uniqKey="Khazanova S">S. V. Khazanova</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Faculty of Physics, N. I. Lobachevskii State University</s1><s2>Nizhnii Novgorod 603950</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>Nizhnii Novgorod 603950</wicri:noRegion></affiliation></author><author><name sortKey="Vasilevskiy, M I" uniqKey="Vasilevskiy M">M. I. Vasilevskiy</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Faculty of Physics, N. I. Lobachevskii State University</s1><s2>Nizhnii Novgorod 603950</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>Nizhnii Novgorod 603950</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Centro de Física, Universidade do Minho, Campus de Gualtar</s1><s2>4710-057 Braga</s2><s3>PRT</s3><sZ>2 aut.</sZ></inist:fA14><country>Portugal</country><wicri:noRegion>4710-057 Braga</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">11-0015865</idno><date when="2010">2010</date><idno type="stanalyst">PASCAL 11-0015865 INIST</idno><idno type="RBID">Pascal:11-0015865</idno><idno type="wicri:Area/Main/Corpus">003918</idno><idno type="wicri:Area/Main/Repository">003C94</idno><idno type="wicri:Area/Russie/Extraction">000107</idno></publicationStmt><seriesStmt><idno type="ISSN">0268-1242</idno><title level="j" type="abbreviated">Semicond. sci. technol.</title><title level="j" type="main">Semiconductor science and technology</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Activation energy</term><term>Adatoms</term><term>Calcium sulfide</term><term>Concentration distribution</term><term>Elastic deformation</term><term>Epitaxy</term><term>Gallium Indium Arsenides Mixed</term><term>Growth mechanism</term><term>Heterostructures</term><term>Layer by layer growth</term><term>Modelling</term><term>Monte Carlo methods</term><term>Photoluminescence</term><term>Pseudomorphic growth</term><term>Quantum wells</term><term>Surface diffusion</term><term>Ultrathin films</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Modélisation</term><term>Photoluminescence</term><term>Adatome</term><term>Epitaxie</term><term>Méthode Monte Carlo</term><term>Croissance pseudomorphique</term><term>Mécanisme croissance</term><term>Energie activation</term><term>Diffusion superficielle</term><term>Gallium Indium Arséniure Mixte</term><term>Distribution concentration</term><term>Déformation élastique</term><term>Puits quantique</term><term>Hétérostructure</term><term>Sulfure de calcium</term><term>Couche ultramince</term><term>InGaAs</term><term>GaAs</term><term>Croissance couche par couche</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Using a Monte Carlo (MC) technique, we performed numerical modelling of the kinetic segregation effect during epitaxial growth of a heterostructure containing an In<sub>c</sub>Ga<sub>1-c</sub>As quantum well (QW) surrounded by two GaAs barriers. The growth occurs in the direction coinciding with or slightly tilted from [001]. The model of growth kinetics takes into account the effect of pseudomorphic deformation of the underlying atomic layers onto the activation energy of adatom diffusion in the growing monolayer. It influences the surface segregation of In atoms and affects the QW shape. Within the effective mass approximation, the dependence of the lowest electron-hole transition energy on the degree of In/Ga segregation (in turn, depending upon the growth conditions and substrate tilting angle) was calculated. The calculations were performed using the composition profiles obtained from the MC modelling and taking into account the corresponding distribution of the elastic strain. The results show that the segregation effect leads to a considerable blue shift and broadening of the QW photoluminescence (PL) peak which increase for higher growth temperatures and lower values of the total cation flux from the gas phase onto the growing surface. Growth on vicinal substrates leads to a reduction of the PL peak broadening.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0268-1242</s0></fA01><fA02 i1="01"><s0>SSTEET</s0></fA02><fA03 i2="1"><s0>Semicond. sci. technol.</s0></fA03><fA05><s2>25</s2></fA05><fA06><s2>8</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Modelling of the composition segregation effect during epitaxial growth of InGaAs quantum well heterostructures</s1></fA08><fA11 i1="01" i2="1"><s1>KHAZANOVA (S. V.)</s1></fA11><fA11 i1="02" i2="1"><s1>VASILEVSKIY (M. I.)</s1></fA11><fA14 i1="01"><s1>Faculty of Physics, N. I. Lobachevskii State University</s1><s2>Nizhnii Novgorod 603950</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></fA14><fA14 i1="02"><s1>Centro de Física, Universidade do Minho, Campus de Gualtar</s1><s2>4710-057 Braga</s2><s3>PRT</s3><sZ>2 aut.</sZ></fA14><fA20><s2>085008.1-085008.7</s2></fA20><fA21><s1>2010</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>21041</s2><s5>354000191788060100</s5></fA43><fA44><s0>0000</s0><s1>© 2011 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>44 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>11-0015865</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Semiconductor science and technology</s0></fA64><fA66 i1="01"><s0>GBR</s0></fA66><fC01 i1="01" l="ENG"><s0>Using a Monte Carlo (MC) technique, we performed numerical modelling of the kinetic segregation effect during epitaxial growth of a heterostructure containing an In<sub>c</sub>Ga<sub>1-c</sub>As quantum well (QW) surrounded by two GaAs barriers. The growth occurs in the direction coinciding with or slightly tilted from [001]. The model of growth kinetics takes into account the effect of pseudomorphic deformation of the underlying atomic layers onto the activation energy of adatom diffusion in the growing monolayer. It influences the surface segregation of In atoms and affects the QW shape. Within the effective mass approximation, the dependence of the lowest electron-hole transition energy on the degree of In/Ga segregation (in turn, depending upon the growth conditions and substrate tilting angle) was calculated. The calculations were performed using the composition profiles obtained from the MC modelling and taking into account the corresponding distribution of the elastic strain. The results show that the segregation effect leads to a considerable blue shift and broadening of the QW photoluminescence (PL) peak which increase for higher growth temperatures and lower values of the total cation flux from the gas phase onto the growing surface. Growth on vicinal substrates leads to a reduction of the PL peak broadening.</s0></fC01><fC02 i1="01" i2="3"><s0>001B60H65</s0></fC02><fC02 i1="02" i2="3"><s0>001B80A07S</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Modélisation</s0><s5>02</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Modelling</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Photoluminescence</s0><s5>03</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Photoluminescence</s0><s5>03</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Adatome</s0><s5>04</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Adatoms</s0><s5>04</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Epitaxie</s0><s5>05</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Epitaxy</s0><s5>05</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Méthode Monte Carlo</s0><s5>06</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Monte Carlo methods</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="FRE"><s0>Croissance pseudomorphique</s0><s5>07</s5></fC03><fC03 i1="06" i2="X" l="ENG"><s0>Pseudomorphic growth</s0><s5>07</s5></fC03><fC03 i1="06" i2="X" l="SPA"><s0>Crecimiento pseudomórfico</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="FRE"><s0>Mécanisme croissance</s0><s5>08</s5></fC03><fC03 i1="07" i2="X" l="ENG"><s0>Growth mechanism</s0><s5>08</s5></fC03><fC03 i1="07" i2="X" l="SPA"><s0>Mecanismo crecimiento</s0><s5>08</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Energie activation</s0><s5>09</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Activation energy</s0><s5>09</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Diffusion superficielle</s0><s5>10</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Surface diffusion</s0><s5>10</s5></fC03><fC03 i1="10" i2="X" l="FRE"><s0>Gallium Indium Arséniure Mixte</s0><s2>NC</s2><s2>NA</s2><s5>11</s5></fC03><fC03 i1="10" i2="X" l="ENG"><s0>Gallium Indium Arsenides Mixed</s0><s2>NC</s2><s2>NA</s2><s5>11</s5></fC03><fC03 i1="10" i2="X" l="SPA"><s0>Mixto</s0><s2>NC</s2><s2>NA</s2><s5>11</s5></fC03><fC03 i1="11" i2="X" l="FRE"><s0>Distribution concentration</s0><s5>13</s5></fC03><fC03 i1="11" i2="X" l="ENG"><s0>Concentration distribution</s0><s5>13</s5></fC03><fC03 i1="11" i2="X" l="SPA"><s0>Distribución concentración</s0><s5>13</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Déformation élastique</s0><s5>14</s5></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Elastic deformation</s0><s5>14</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Puits quantique</s0><s5>15</s5></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Quantum wells</s0><s5>15</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Hétérostructure</s0><s5>18</s5></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Heterostructures</s0><s5>18</s5></fC03><fC03 i1="15" i2="X" l="FRE"><s0>Sulfure de calcium</s0><s5>19</s5></fC03><fC03 i1="15" i2="X" l="ENG"><s0>Calcium sulfide</s0><s5>19</s5></fC03><fC03 i1="15" i2="X" l="SPA"><s0>Calcio sulfuro</s0><s5>19</s5></fC03><fC03 i1="16" i2="3" l="FRE"><s0>Couche ultramince</s0><s5>20</s5></fC03><fC03 i1="16" i2="3" l="ENG"><s0>Ultrathin films</s0><s5>20</s5></fC03><fC03 i1="17" i2="3" l="FRE"><s0>InGaAs</s0><s4>INC</s4><s5>52</s5></fC03><fC03 i1="18" i2="3" l="FRE"><s0>GaAs</s0><s4>INC</s4><s5>53</s5></fC03><fC03 i1="19" i2="3" l="FRE"><s0>Croissance couche par couche</s0><s4>CD</s4><s5>96</s5></fC03><fC03 i1="19" i2="3" l="ENG"><s0>Layer by layer growth</s0><s4>CD</s4><s5>96</s5></fC03><fN21><s1>010</s1></fN21></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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